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| Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E General Description The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. The APT13003E series are available in TO-92 and TO126 packages. Features * * * * High Switching Speed High Collector-Emitter Voltage Low Cost Bulk and Ammo Packing TO-92 Package and TO-126 Package Applications * * Battery Chargers for Mobile Phone of BCD Solution Power Supply for DVD/STB of BCD Solution TO-92 (Bulk Packing) TO-92 (Ammo Packing) Figure 1. Package Types of APT13003E TO-126 Pin Configuration Z Package TO-92 3 2 1 Base 3 Collector Emitter 2 1 Emitter Collector Base U Package TO-126 (Top View) (Front View) Figure 2. Pin Configurations of APT13003E May 2008 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Ordering Information APT13003 Circuit Type E1: Lead Free TR: Ammo Blank: Bulk Package Z: TO-92 U: TO-126 E: APT13003E Package TO-92 TO-126 Part Number APT13003EZ-E1 APT13003EZTR-E1 APT13003EU-E1 Marking ID 13003EZ-E1 13003EZ-E1 EU13003E Packing Type Bulk Ammo Bulk BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (Pulse) (Note 2) Base Current Base Peak Current (Pulse) (Note 2) Power Dissipation, TA=25oC Power Dissipation, TC=25oC Operating Junction Temperature Storage Temperature Range For TO-92 For TO-126 Symbol VCES VCEO VEBO IC ICM IB IBM PTOT PTOT TJ TSTG Value 700 465 9 1.5 3 0.75 1.5 1.1 20 150 -65 to 150 Unit V V V A A A A W W o o C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle 10%. May 2008 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Thermal Characteristics Parameter Thermal Resistance (Junction-to-Case) For TO-92 For TO-126 For TO-92 Thermal Resistance (Junction-to-Ambient) For TO-126 RJA Symbol RJC Value 83.3 6.25 113.6 96 oC/W Unit oC/W Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Symbol ICEV VCEO (sus) VCE (sat) VBE (sat) Conditions VCE=700V IC=100A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=0.3A, VCE=2V DC Current Gain (Note 3) hFE IC=0.5A, VCE=2V IC=1.0A, VCE=2V Output Capacitance Current Gain Bandwidth Product Turn-on Time with Resistive Load Storage Time with Resistive Load Fall Time with Resistive Load Cob fT ton ts tf IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, TP=25S VCB=10V, f=0.1MHZ VCE=10V, IC=0.1A 4 0.3 1.8 0.28 1 3 0.4 s 15 13 5 16 17 30 25 pF MHz 465 0.17 0.29 0.3 0.4 1.0 1.2 V Min Typ Max 10 Unit A V V Note 3: Pulse test for Pulse Width 300s, Duty Cycle 2%. May 2008 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Typical Performance Characteristics 10 10 1 Collector Current IC (A) Collector Current IC (A) 1 0.1 DC DC 0.1 0.01 1E-3 1 10 100 1000 0.01 1 10 100 1000 Collector-Emitter Clamp Voltage VCE (V) Collector-Emitter Clamp Voltage VCE (V) Figure 3. Safe Operating Areas (TO-92 Package) Figure 4. Safe Operating Areas (TO-126 Package) 125 2.00 1.75 IB=400mA IB=300mA IB=250mA IB=200mA IB=150mA IB=100mA IB=50mA 100 Power Derating Factor (%) Collector Current IC (A) 1.50 1.25 1.00 0.75 0.50 0.25 75 50 25 0 0 25 50 75 100 125 o 0.00 150 175 200 0 1 2 3 4 5 Case Temperature TC ( C) Collector-Emitter Voltage VCE (V) Figure 5. Power Derating Curve Figure 6. Static Characteristics May 2008 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Typical Performance Characteristics (Continued) 40 35 30 10 TA=125 C o VCE=5V VCE=1V Collector-Emitter Voltage VCE (V) 1 DC Current Gain 25 TA=25 C 20 15 10 5 0 0.01 o TJ=125 C 0.1 o TJ=25 C o hFE=5 0.01 0.1 0.1 1 1 Collector Current IC (A) Collector Current IC (A) Figure 7. DC Current Gain Figure 8. Collector-Emitter Saturation Voltage 1.1 20 VCE=2V, IC=0.5A Base-Emitter Voltage VBE (V) 1.0 18 0.9 TJ=25 C 0.8 o 16 hFE 14 0.7 TJ=125 C 12 o 0.6 hFE=5 0.5 0.1 1 10 25 50 75 100 o 125 150 Collector Current IC (A) Case Temperature ( C) Figure 9. Base-Emitter Saturation Voltage Figure 10. hFE vs. Case Temperature May 2008 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch) 1.100(0.043) 1.400(0.055) 3.430(0.135) MIN 0.360(0.014) 0.510(0.020) 3.300(0.130) 3.700(0.146) 0.000(0.000) 0.380(0.015) 1.600(0.063) MAX 4.400(0.173) 4.700(0.185) 4.300(0.169) 4.700(0.185) 0.380(0.015) 0.550(0.022) 1.270(0.050) TYP 2.440(0.096) 2.640(0.104) May 2008 Rev. 1. 2 6 14.100(0.555) 14.500(0.571) BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 4.400(0.173) 4.700(0.185) 4.300(0.169) 1.100(0.043) 1.400(0.055) 3.430(0.135) MIN 0.360(0.014) 0.510(0.020) 4.700(0.185) 1.270(0.050) Typ 3.300(0.130) 3.700(0.146) 4.500(0.177) 5.500(0.217) 13.000(0.512) 0.000(0.000) 0.380(0.015) 1.600(0.063) MAX 14.000(0.551) 0.380(0.015) 0.550(0.022) 2.540(0.100) Typ May 2008 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Mechanical Dimensions (Continued) TO-126 Unit: mm(inch) 7.400(0.291) 7.800(0.307) 3.900(0.154) 4.100(0.161) 10.600(0.417) 11.000(0.433) 3.000(0.118) 3.200(0.126) 1.170(0.046) 1.370(0.054) 0.660(0.026) 2.100(0.083) 2.300(0.091) 0.860(0.034) 15.300(0.602) 15.700(0.618) 2.290(0.090)TYP 4.480(0.176) 4.680(0.184) 0.450(0.018) 0.600(0.024) May 2008 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited 0.000(0.000) 0.300(0.012) 2.500(0.098 2.900(0.114) 1.100(0.043) 1.500(0.059) BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 |
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